No.1020E 2024Special Edition on Environmental Technologies Development of Grinding Wheel with Extended Service Life (nanoVi®) for SiC Power-semiconductor Wafers -Optimization of Wheel Components-

Category TECHNICAL REPORT
Author K. MINESHIMA S. SHIMADA T. KOJIMA
Development Dept., JTEKT GRINDING TOOLS CORPORATION
T. KATO
National Institute of Advanced Industrial Science and Technology (AIST)
Abstract There is currently demand for more stable quality and lower costs in the manufacturing processes of SiC power semiconductors. In this development activity, we focused on the compounding ratios and dispersibility of the constituent elements of grinding wheels (abrasive grains, bonding agents, and pores) and investigated their relationships with grinding performance. Based on these results, we developed the grinding wheel nanoVi®, which has a service life that is 2.3 times longer than conventional grinding wheels.
Keyword SiC power semiconductor, grinding wheel
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